Ovchinnikov Sergey Gennadievich

1. Family name: Ovchinnikov
2. Family name: Sergey
3. Gennadievich
4. Birth date: 21.03.1950
5. Address: L.V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russia
6. Phone: 7 (391)243 29 06
7. Fax: 7 (391)243 89 23
8. E-mail: sgo@iph.krasn.ru
9. Education:

• 1984 - doctor of physics and mathematics, Kirensky Institute of Physics, Krasnoyarsk
• 1977 - kandidate of physics and mathematics, Kirensky Institute of Physics, Krasnoyarsk
• 1972 - graduated from physical department of Krasnoyarsk State University

10. Experience:

• 1973-1978 - theory of metal-insulator phase transitions in 3d-metal compounds, structural and magnetic phase transitions
• 1979-1983 - theory of mixed valence systems
• 1983-1988 - theory of anisotropic Heisenberg magnets
• 1979-1998 - magnetic semiconductors: band structure and electronic properties
• 1987-up to now-physics of strongly correlated electron systems like high-Tc superconductors, magnetic semiconductors, and CMR manganites: band structure of strongly correlated electrons, electronic and magnetic properties, searching for new materials

11. Position held:

• vice-director of the L.V.Kirensky Institute of physics, head of the magnetic phenomena laboratiry and professor of theoretical physics department of the Krasnoyarsk State University, professor of Krasnoyarsk Technical University and Siberian Aerosrace Academy

12. Research interests:

• theory of high-Tc superconductivity
• electronic and magnetic properties of transition metal compounds
• magnetism of anisotropic spin systems
• structure and properties of magnetic nanomaterials

13. Selected publications:
1. S.G. Ovchinnikov, V.V. Val’kov, Hubbard operators in the Theory of Strongly correlated electrons, monograph, Imperial College Press, London-Singapure, 2004
2. Korshunov M.M., Gavrichkov V.A., Ovchinnikov S.G., Nekrasov I.A., Pchelkina Z.V., Anisimov V.I., Hybrid LDA and generalized tight-binding method for electronic structure calculations of strongly correlated electron systems // Phys.Rev. B. -2005. -72, 165104.
3. Ovchinnikov S.G., Magnetic collapse and electronic phase transitions at high pressure in transition metal oxides // Journ. of Magn. and Magnet.Materials 300, 243 (2006).
4. Ovchinnikov S.G., Shneyder E.I. Electron-phonon interaction in cuprates with T and T?-structure in strongly correlated limit // Physica B 378-380, 451-452 (2006).
5. Ding Y., Haskel D., Ovchinnikov S.G., Tseng Y.-Ch., Orlov Yu.S., Mao N-K. A Novel Magnetic Transition in Magnetite Fe3O4 between 12-16 GPa, Phys. Rev. Lett. 100 , 045508, (2008).
6. Avramov P.V., Sorokin P.B., Fedorov D.G., Chernozatonskii L.A., Narumi K., Ovchinnikov S.G. and Morokuma K.. Quantum dots embedded into silicon nanowires effectively partition electron confinement // J. Appl. Physics. – 2008. – V. 104. – P. 054305(6)..
7. Edelman I., Ovchinnikov S., Markov V., Kosyrev N., Seredkin V., Khudjakov A., Bondarenko G., Kesler V., Room-temperature ferromagnetism in Dy films doped with Ni // Physica B – 2008. – V. 403, pp. 3295–3301.
8. Gavriliuk A.G., Struzhkin V.V., Lyubutin I.S., Ovchinnikov S.G., Hu M.Y., Chow P. Another mechanism for the insulator-metal transition in BiFeO3 // Phys. Rev. – 2008. – V. 71, p. 155112.
9. Sorokin P.B., Avramov P.V., Chernozatonskii L.A., Fedorov D.G., Ovchinnikov S.G., Morokuma K., “A Typical Quantum Confinement Effect in Silicon Nanowires” // J. Physical Chemistry A – 2008. – V. 112, pp. 9955-9964.
10. Sorokin P.B., Avramov P.V., Kvashnin A.G., Kvashnin D.G., Ovchinnikov S.G., Fedorov A.S., “Density functional study of <110>-oriented thin silicon nanowires” // Physical Review B – 2008. – V. 77, p. 235417.
11. Varnakov S.N., Komogortsev S.V., Ovchinnikov S.G., Bartolome J., Sese J. Magnetic properties and nonmagnetic phases formation in nanostructured films (Fe/Si)n // J. Appl. Phys. 104, 094703 (2008)